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| FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET July 2008 FDZ1905PZ Common Drain P-Channel 1.5V -20V, -3A, 123m Features Max rS1S2(on) = 126m at VGS = -4.5V, IS1S2 = -1A Max rS1S2(on) = 141m at VGS = -2.5V, IS1S2 = -1A Max rS1S2(on) = 198m at VGS = -1.8V, IS1S2 = -1A Max rS1S2(on) = 303m at VGS = -1.5V, IS1S2 = -1A Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB High power and current handling capability HBM ESD protection level > 4kV (Note 3) RoHS Compliant tm PowerTrench(R) WL-CSP General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild's advanced 1.5V PowerTrench(R) process with state of the art "low pitch" WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on) . Applications Battery management Load switch Battery protection PIN1 S1 S1 G2 S2 S2 G1 G1 S1 G2 BOTTOM TOP S2 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VS1S2 VGS IS1S2 Parameter Source1 to Source2 Voltage Gate to Source Voltage Source1 to Source2 Current -Continuous -Pulsed PD TJ, TSTG Power Dissipation (Steady State) Power Dissipation TA = 25C TA = 25C (Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings -20 8 -3 -15 1.5 0.9 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 83 140 C/W Package Marking and Ordering Information Device Marking 5 Device FDZ1905PZ Package WL-CSP 1.0X1.5 Reel Size 7'' Tape Width 8mm Quantity 5000 units (c)2008 Fairchild Semiconductor Corporation FDZ1905PZ Rev.B 1 www.fairchildsemi.com FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 IGSS Zero Gate Voltage Source1 to Source2 Current Gate Body Leakage Current VS1S2 = -16V, VGS = 0V VGS = 8V, VS1S2 = 0V -1 10 A uA On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = -250A VGS = -4.5V, IS1S2 = -1A VGS = -2.5V, IS1S2 = -1A rS1S2(on) Static Source1 to Source2 On Resistance VGS = -1.8V, IS1S2 = -1A VGS = -1.5V, IS1S2 = -1A VGS = -4.5V, IS1S2 = -1A, TJ = 125C gFS Forward Transconductance VS1S2 = -5V, IS1S2 = -1A -0.4 -0.7 99 112 132 164 135 8 -1.0 126 141 198 303 195 S m V Switching Characteristics (Note 2) td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VS1S2 = -10V, IS1S2 = -1A VGS = -4.5V, RGEN = 6 12 36 143 182 22 58 229 291 ns ns ns ns Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 83C/W when mounted on a 1 in2 pad of 2 oz copper b.140C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDZ1905PZ Rev.B 2 www.fairchildsemi.com FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted 15 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) VG2S2 = -4.5V 15 VGS = -4.5V VG2S2 = -3.0V VG2S2 = -2.5V 12 9 12 9 VGS = -3.0V VGS = -2.5V VG2S2 = -1.8V VGS = -1.8V 6 VG2S2 = -1.5V 6 VGS = -1.5V 3 0 0 1 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VG1S1 = -4.5V 3 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 5 -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 2 3 -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 1. On Region Characteristics NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE Figure 2. On Region Characteristics 2.5 VGS = -1.5V 3.0 2.5 2.0 VG2S2 = -1.5V VG2S2 = -1.8V VG2S2 = -2.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VG1S1 = -4.5V 2.0 VGS = -2.5V 1.5 VGS = -1.8V VGS = -3.0V 1.5 1.0 VG2S2 = -3.0V 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4.5V VG2S2 = -4.5V 0.5 0 3 6 9 12 15 -IS1S2, SOURCE1 TO SOURCE2 CURRENT(A) 0.5 0 3 6 9 12 15 -IS1S2, SOURCE1 TO SOURCE2 CURRENT(A) Figure 3. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE Figure 4. Normalized On-Resistance vs Drain Current and Gate Voltage 500 SOURCE2 ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.6 1.4 1.2 1.0 0.8 0.6 -50 IS1S2 = -1A VGS = -4.5V rS1S2(on), SOURCE1 TO 400 IS1S2 = -1A 300 TJ = 125oC 200 100 TJ = 25oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Normalized On Resistance vs Junction Temperature Figure 6. On-Resistance vs Gate to Source Voltage FDZ1905PZ Rev.B 3 www.fairchildsemi.com FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 15 -IG, GATE LEAKAGE CURRENT(A) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -3 12 VS1S2 = -5V 10 10 10 10 10 10 -4 VGS = 0V -5 9 6 TJ = 150oC TJ = 25oC TJ = 150oC -6 -7 TJ = 25oC 3 TJ = -55oC -8 0 0.0 -9 0.5 1.0 1.5 2.0 2.5 0 3 6 9 12 15 -VGS, GATE TO SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE(V) Figure 7. Transfer Characteristics Figure 8. Gate Leakage vs Gate to Source Voltage 10 2 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) P(PK), PEAK TRANSIENT POWER (W) 20 10 100us VGS = -4.5V SINGLE PULSE RJA = 140oC/W TA = 25oC 10 1 1 SINGLE PULSE TJ = MAX RATED 1ms 10ms 100ms 1s 10s DC 0.1 RJA = 140oC/W TA = 25oC 10 0 THIS AREA IS LIMITED BY rS1S2(on) 0.01 0.1 10 -1 1 10 60 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 t, PULSE WIDTH (sec) -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 2 Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE RJA = 140 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0 1 2 3 0.01 -3 10 10 -2 10 -1 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDZ1905PZ Rev.B 4 www.fairchildsemi.com FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET FDZ1905PZ Rev.B 5 www.fairchildsemi.com FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDZ1905PZ Rev.B 6 www.fairchildsemi.com |
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